POINT-DEFECTS IN SILICON STUDIED BY NICKEL DIFFUSION

被引：21
|
作者：
KITAGAWA, H [1 ]
HASHIMOTO, K [1 ]
YOSHIDA, M [1 ]
机构：
[1] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN
来源：
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(83)90268-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：323 / 327
页数：5
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