POINT-DEFECTS IN SILICON STUDIED BY NICKEL DIFFUSION

被引：21

作者：

KITAGAWA, H ^{[1
]}

HASHIMOTO, K ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90268-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：323 / 327

页数：5

共 50 条

[1] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON
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