GROWTH OF PEROVSKITE PLZT THIN-FILMS BY DUAL ION-BEAM SPUTTERING

被引:4
|
作者
TOSSELL, DA
SHORROCKS, NM
OBHI, JS
WHATMORE, RW
机构
[1] GEC-Marconi Materials Technology Ltd, Towcester, Northants, NN12 8EQ, Caswell
关键词
D O I
10.1080/00150199208015603
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
PLZT thin films have been deposited using the emerging PVD technique of dual ion-beam sputtering (DIBS). The DIBS process produces high quality orientated perovskite films of bulk refractive index, good stoichiometry and full density, i.e., few pinholes. Films have been formed at 500-600-degrees-C onto sapphire, fused silica, Mg0 and silicon substrates by sputtering from an adjustable composite PLZT ceramic/Ti and Pb metallic target. Some substrates were coated with platinum prior to deposition to allow longitudinal electrical measurements on the films. Perovskite lead titanate PLZT (0/0/100), PLZT (10/0/100) and PLZT (28/0/100) films have been grown, the former two are of interest for thin film pyroelectric detectors whereas the latter is a quadratic electro-optic suited to optical waveguide, shutter and switching applications.
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页码:297 / 302
页数:6
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