STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS

被引：823

作者：

MOTT, NF

DAVIS, EA

STREET, RA

机构：

[1] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE, ENGLAND

[2] MAX PLANCK INST FESTKORPER FORSCH, STUTTGART, FED REP GER

来源：

PHILOSOPHICAL MAGAZINE | 1975年 / 32卷 / 05期

关键词：

D O I：

10.1080/14786437508221667

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：961 / 996

页数：36

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