ION-BEAM ETCHING OF SILICON DIOXIDE LAYERS FOR MOS DEVICES

被引：0
|
作者：
MADER, L [1 ]
WIDMANN, D [1 ]
HOPFNER, J [1 ]
机构：
[1] SIEMENS AG,HOFMANN STR 51,D-8000 MUNICH 70,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C86 / C86
页数：1
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