HIGH-GREQUENCY OSCILLATIONS OF P++-N+-N-N++ AVALANCHE DIODES BELOW TRANSIT-TIME CUTOFF

被引:26
|
作者
HOEFFLINGER, B
机构
关键词
D O I
10.1109/T-ED.1966.15649
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:151 / +
页数:1
相关论文
共 50 条
  • [31] Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
    Ryzhii, Victor
    Ryzhii, Maxim
    Mitin, Vladimir
    Shur, Michael S.
    [J]. APPLIED PHYSICS EXPRESS, 2009, 2 (03)
  • [32] Avalanche noise measurement in thin Si p+-i-n+ diodes
    Tan, CH
    Clark, JC
    David, JPR
    Rees, GJ
    Plimmer, SA
    Tozer, RC
    Herbert, DC
    Robbins, DJ
    Leong, WY
    Newey, J
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3926 - 3928
  • [33] TEMPERATURE RISE OF SILICON P-N JUNCTION AVALANCHE OSCILLATION DIODES
    YAMAGUCHI, M
    OHMORI, M
    [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1971, 19 (9-10): : 1060 - +
  • [34] HIGH-GAIN (P) ALGAAS-(N) GAAS HETEROJUNCTION AVALANCHE PHOTO-DIODES
    NOVAK, J
    MORVIC, M
    KORDOS, P
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 82 - 83
  • [35] Avalanche injection in high voltage Si p-i-n diodes measurements and device simulations
    Domeij, M
    Breitholtz, B
    Linnros, J
    Ostling, M
    [J]. ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 125 - 128
  • [36] OSCILLATIONS IN P-I-N GERMANIUM DIODES IN CROSSED FIELDS
    KAKIHANA, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 5002 - &
  • [37] Avalanche mechanism in p+-n--n+ and p+-n mid-wavelength infrared Hg1-xCdxTe diodes on Si substrates
    Mallick, Shubhrangshu
    Banerjee, Koushik
    Velicu, Silviu
    Grein, Christoph
    Ghosh, Siddhartha
    Zhao, Jun
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) : 1488 - 1496
  • [38] Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes
    Qing Chen
    Lin’an Yang
    Shulong Wang
    Yue Hao
    [J]. Applied Physics A, 2016, 122
  • [39] Experimental determination of electron drift velocity in 4H-SiC p+-n-n+ avalanche diodes
    Vassilevski, KV
    Zekentes, K
    Zorenko, AV
    Romanov, LP
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (10) : 485 - 487
  • [40] NUMERICAL-ANALYSIS OF ELECTRIC-FIELD INSIDE MESA P+-N-N+ AVALANCHE-DIODES
    COSTEA, I
    DASCALU, D
    [J]. ELECTRONICS LETTERS, 1974, 10 (08) : 129 - 131