共 50 条
- [32] Avalanche noise measurement in thin Si p+-i-n+ diodes [J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3926 - 3928
- [33] TEMPERATURE RISE OF SILICON P-N JUNCTION AVALANCHE OSCILLATION DIODES [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1971, 19 (9-10): : 1060 - +
- [35] Avalanche injection in high voltage Si p-i-n diodes measurements and device simulations [J]. ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 125 - 128
- [38] Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes [J]. Applied Physics A, 2016, 122