PREPARATION OF PBZRO3-PBTIO3 FERROELECTRIC THIN-FILMS BY THE SOL-GEL PROCESS

Ferroelectric films, PbZr(x)Ti(1-x)O3 (x = 0 to 0.6), have been prepared from corresponding metal alkoxides partially stabilized with acetylacetone through the sol-gel process. The films dip-coated in an ambient atmosphere were heat-treated at 400-degrees-C for decomposition of residual organics and then at temperatures between 500-degrees and 700-degrees-C for crystallization of the films. The perovskite phase precipitated at temperatures above 560-degrees-C, accompanied by an increase in dielectric constant. The dielectric constant of the films, which was comparable with that of sintered bodies, showed a maximum (approximately 620) at around x = 0.52 in PbZr(x)Ti(1-x)O3. These films showed D-E hysteresis, with slightly higher values of coercive field, compared with those of sintered bodies.