PREPARATION OF BI-BASED FERROELECTRIC THIN-FILMS BY SOL-GEL METHOD

被引：251
|
作者：
ATSUKI, T
SOYAMA, N
YONEZAWA, T
OGI, K
机构：
[1] Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation, Omiya, Saitama, 330
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词：
FERROELECTRIC THIN FILM; SOL-GEL; SRBI2TA2O9; HYSTERESIS LOOP; ELECTRICAL PROPERTY;
D O I：
10.1143/JJAP.34.5096
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of Bi/Ta and Sr/Ta mole ratios on ferroelectric properties of SrxBiyTa2O2 [SBIT(x/y/2.0); 0.7 less than or equal to x less than or equal to 1.0, 2.0 less than or equal to y less than or equal to 2.6] thin-film capacitors were investigated. The SBIT films were grown by the sol-gel method using a spin-on coating on Pt/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were annealed at 800 degrees C for one hour in oxygen atmosphere. Remanent polarization (Pr) depended strongly on the Sr/Ta mole ratio, and increased with decrease of the Sr/Ta mole ratio. On the other hand, Pr was almost independent of the Bi/Ta mole ratio. Scanning electron microscopy (SEM) images show that crystal grains grew with decrease of the Sr/Ta mole ratio. Electron probe micro analyzer (EPMA) analysis revealed that Bi content in SPIT films increased with decrease in Sr composition from stoichiometry.
引用
收藏
页码：5096 / 5099
页数：4
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