EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS

被引：24

作者：

SHENG, WW ^{[1
]}

机构：

[1] GE,NEW YORK,NY 13021

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 01期

关键词：

D O I：

10.1109/T-ED.1975.18068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 27

页数：3

共 50 条

[1] EMITTER INJECTION EFFICIENCY IN HETEROJUNCTION BIPOLAR-TRANSISTORS
NEUGROSCHEL, A
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (11) : 1171 - 1173
[2] EMITTER EFFICIENCY OF BIPOLAR-TRANSISTORS
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SLOTBOOM, JW
SCHMITZ, A
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (06) : 515 - 521
[3] THE STUDY OF EMITTER THICKNESS EFFECT ON THE HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS
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LEE, CP
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[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1398 - 1402
[4] EMITTER EFFICIENCY OF SILICON BIPOLAR-TRANSISTORS - UNPERTURBED BAND MODEL
HEASELL, EL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 919 - 923
[5] EMITTER EFFICIENCY OF SI BIPOLAR-TRANSISTORS - STRUCTURAL AND ELECTRICAL INVESTIGATIONS
ZAGOZDZONWOSIK, W
MIZERA, E
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02): : K125 - &
[6] EMITTER EFFICIENCY, TRANSIT TIMES AND CURRENT GAIN OF BIPOLAR-TRANSISTORS
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[J]. SOLID-STATE ELECTRONICS, 1987, 30 (07) : 685 - 692
[7] BARRIER AND RECOMBINATION EFFECTS IN THE BASE-EMITTER JUNCTION OF HETEROSTRUCTURE BIPOLAR-TRANSISTORS
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FRANK, DJ
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 993 - 995
[8] SURFACE RECOMBINATION CURRENT IN INGAP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS
YANG, YF
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YANG, ES
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 643 - 647
[9] COMPARISON OF GAINP/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS
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YANG, ES
CHEN, YK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1210 - 1215
[10] INVESTIGATION OF EMITTER CURRENT CROWDING EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS
FOURNIER, V
DANGLA, J
DUBONCHEVALLIER, C
[J]. ELECTRONICS LETTERS, 1993, 29 (20) : 1799 - 1800

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