EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS

被引：24

作者：

SHENG, WW ^{[1
]}

机构：

[1] GE,NEW YORK,NY 13021

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 01期

关键词：

D O I：

10.1109/T-ED.1975.18068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 27

页数：3

共 50 条

[21] MICROSTRUCTURAL EFFECTS OF EMITTER SIZE ON POLYSILICON-EMITTER BIPOLAR-TRANSISTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5318 - 5322
[22] EMITTER COMPOSITION AND GEOMETRY RELATED SURFACE RECOMBINATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5483 - 5488
[23] A NEW SIMPLE ANALYTICAL EMITTER MODEL FOR BIPOLAR-TRANSISTORS
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[J]. SOLID-STATE ELECTRONICS, 1987, 30 (07) : 723 - 728
[24] SOURCES OF EMITTER-COLLECTOR SHORTS IN BIPOLAR-TRANSISTORS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C93 - C94
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[27] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
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[28] THE EMITTER-INJECTION EFFICIENCY AND EMITTER EFFECTIVE SURFACE-RECOMBINATION VELOCITY IN POLYSILICON EMITTER TRANSISTORS
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[30] Emitter injection efficiency and base transport factor in InAs bipolar transistors
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