CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS

被引：284
|
作者：
POWELL, MJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 06期
关键词：
D O I：
10.1063/1.94399
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：597 / 599
页数：3
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