PRECIPITATION ALONG GROWTH SWIRLS IN CZOCHRALSKI-GROWN SILICON WAFERS

被引：0

作者：

SCHAAKE, HF ^{[1
]}

RUIZ, HDJ ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 857

页数：1

共 50 条

[31] MECHANISMS OF OXYGEN INCORPORATION IN CZOCHRALSKI-GROWN SILICON
MURGAI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C92 - C92
[32] DETERMINATION OF THE DENUDED ZONE IN CZOCHRALSKI-GROWN SILICON-WAFERS THROUGH MOS LIFETIME PROFILING
PAZ, O
SCHNEIDER, CP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2830 - 2838
[33] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING
YAMAMOTO, K
KISHINO, S
MATSUSHITA, Y
IIZUKA, T
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 195 - 197
[34] Detection of kite-shaped COPs in nitrogen-doped Czochralski-grown silicon wafers
Lee, WP
Yow, HK
Tou, TY
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (11) : G282 - G285
[35] NATURE OF OXYGEN DONOR IN CZOCHRALSKI-GROWN SILICON
FUKUOKA, N
YONETA, M
MIYAMURA, R
SAITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 197 - 201
[36] Nature of large-scale oscillations in oxygen concentration along the growth axis in Czochralski-grown silicon crystals
V. V. Litvinov
A. N. Petukh
Yu. M. Pokotilo
[J]. Crystallography Reports, 2001, 46 : 1046 - 1048
[37] Precipitation of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon
Shen, B
Zhang, R
Shi, Y
Zheng, YD
Sekiguchi, T
Sumino, K
[J]. CHINESE PHYSICS LETTERS, 1996, 13 (04) : 289 - 292
[38] Nature of large-scale oscillations in oxygen concentration along the growth axis in czochralski-grown silicon crystals
Litvinov, VV
Petukh, AN
Pokotilo, YM
[J]. CRYSTALLOGRAPHY REPORTS, 2001, 46 (06) : 1046 - 1048
[39] OXYGEN PRECIPITATION AND THERMAL DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON DOPED WITH CARBON AND TIN
WIJARANAKULA, W
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2737 - 2739
[40] SYNCHROTRON SECTION TOPOGRAPHIC STUDY OF CZOCHRALSKI-GROWN SILICON-WAFERS FOR ADVANCED MEMORY-CIRCUITS
TUOMI, T
TUOMINEN, M
PRIEUR, E
PARTANEN, J
LAHTINEN, J
LAAKKONEN, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) : 1699 - 1701

← 1 2 3 4 5 →