CU DEPOSITION USING A PERMANENT-MAGNET ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA SOURCE

An elecron cyclotron resonance (ECR) plasma has been used in conjunction with a solid metal sputter target for Cu deposition over a 200 mm diameter. The goal is to develop a deposition process suitable for filling submicron, high aspect ratio features used for ultralarge-scale integration. The system uses a permanent magnet for creation of the magnetic field necessary for ECR and is significantly more compact than systems equipped with electromagnets. A custom launcher design allows remote microwave injection with the microwave entrance window shielded from the Cu flux. Cu deposition rates up to 100 nm min(-1) were observed and film resistivities were typically in the low to mid 2 mu Omega cm range. On the basis of deposition rate measurements at two radial sample positions, uniformities of a few per cent over a 200 mm wafer should be attainable.