DEFECT FORMATION IN SEMICONDUCTOR LAYERS DURING EPITAXIAL-GROWTH

被引：0
|
作者：
STEINER, B
TSENG, W
COMAS, J
LAOR, U
DOBBYN, RG
RAJAN, K
机构：
[1] NUCL RES CTR NEGEV,IL-84190 BEER SHEVA,ISRAEL
[2] RENSSELAER POLYTECH INST,TROY,NY 12180
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90383-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High resolution monochromatic synchrotron X-radiation diffraction images of several high quality multilayer systems suggest several factors in the establishment of irregularities in layered semiconducting crystals. The nucleation of extensive arrays of dislocations during uniform one micro meter layer deposition appears to depend not only on the extent of lattice mismatch and layer thickness but also on the regularity of the substrate. Propagation of arrays of mismatch dislocations appears to depend on the character of the unit cell.
引用
收藏
页码：543 / 549
页数：7
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