A REVIEW OF RAPID THERMAL ANNEALING (RTA) OF B, BF2 AND AS IONS IMPLANTED INTO SILICON

被引：92
|
作者：
SEIDEL, TE [1 ]
LISCHNER, DJ [1 ]
PAI, CS [1 ]
KNOELL, RV [1 ]
MAHER, DM [1 ]
JACOBSON, DC [1 ]
机构：
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期
关键词：
D O I：
10.1016/0168-583X(85)90562-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：251 / 260
页数：10
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