INSITU STUDY OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY INFRARED ELLIPSOMETRY

被引：39
|
作者：
BLAYO, N
DREVILLON, B
机构：
[1] Laboratoire de Physique des Interfaces et des Couches Minces (UPR A258 du CNRS), Ecole Polytechnique
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期
关键词：
D O I：
10.1063/1.106311
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The early stage of the growth of plasma deposited amorphous silicon (a-Si:H) on glass substrates is investigated by in situ infrared phase modulated ellipsometry in the silicon-hydrogen stretching mode region. Analysis of the spectra provides unprecedented sensitivity and quantitative information on the film evolution. In particular SiH, SiH2, and SiH3 bonds are identified in 5-20 angstrom thick samples. The bond densities of SiH and SiH2 in thin films are estimated After the interaction with the substrate, alpha-Si:H films grow beneath a hydrogen rich overlayer containing SiH2 and SiH3 bonds. At 250-degrees-C the thickness of this overlayer is compatible with one monolayer. The hydrogen-passivated surface of a-Si:H is then weakly reactive.
引用
收藏
页码：950 / 952
页数：3
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