STRUCTURE AND OPTICAL CHARACTERIZATION OF ZNXCD1-X TE THIN-FILMS PREPARED BY THE CLOSE SPACED VAPOR TRANSPORT METHOD

Zinc cadmium telluride (Zn(x)Cd1-x Te) solid solution films with 0 less-than-or-equal-to x less-than-or-equal-to 0.12 were deposited by the close spaced vapor transport method and characterized using photoluminescence, x-ray diffraction, and scanning electron microscopy. The two former techniques indicate that films with high crystalline quality can be prepared with moderate substrate temperatures and low argon pressures. Under these conditions deposition rates of up to 1000 angstrom/s are achieved and Zn concentration in the film is the same as that of the source. The electron micrographs show grain sizes comparable to the film thickness.