CHARACTERIZATION OF CU(GA, IN)SE2 THIN-FILMS AND HETEROJUNCTIONS GROWN BY CLOSE-SPACED VAPOR TRANSPORT

被引：9
|
作者：
DJESSAS, K [1 ]
MASSE, G [1 ]
机构：
[1] UNIV PERPIGNAN,52 AVE VILLENEUVE,F-66860 PERPIGNAN,FRANCE
来源：
THIN SOLID FILMS | 1993年 / 232卷 / 02期
关键词：
D O I：
10.1016/0040-6090(93)90008-D
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CuGaxIn1-xSe2 polycrystalline thin films were grown by a simple technique using close-spaced vapour transport in closed tubes with iodine as a reagent. The depositions were carried out at temperatures below 600-degrees-C. Glass or molybdenum substrates could be used. The samples were characterized by X-ray, electron microprobe and scanning electron microscopy measurements. The optimal conditions for depositing good quality thin films were determined. The thin film resistivities, carrier densities and mobilities were deduced from Hall effect measurements. The energy gaps were calculated from optical absorption experiments at 77 and 300 K. The experimental conditions for depositing Cu(Ga, In)Se2-(Cd, Zn)S heterojunctions are discussed.
引用
收藏
页码：194 / 200
页数：7
相关论文
共 50 条
  • [1] Morphology of Cu(In,Ga)Se2 thin films grown by close-spaced vapor transport from sources with different grain sizes
    Massé, G
    Djessas, K
    Monty, C
    Sibieude, F
    [J]. THIN SOLID FILMS, 2002, 414 (02) : 192 - 198
  • [2] Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique
    Bouloufa, A.
    Djessas, K.
    Todorovic, D.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (1-2) : 82 - 87
  • [3] CLOSE-SPACED VAPOR TRANSPORT OF CUINSE2, CUGASE2 AND CU(GA, IN)SE2
    MASSE, G
    DJESSAS, K
    [J]. THIN SOLID FILMS, 1993, 226 (02) : 254 - 258
  • [4] SnS thin films grown by close-spaced vapor transport
    Yanuar
    Guastavino, F
    Llinares, C
    Djessas, K
    Masse, G
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (23) : 2135 - 2137
  • [5] PREPARATION AND CHARACTERIZATION OF CLOSE-SPACED VAPOR TRANSPORT THIN-FILMS OF ZNSE FOR HETEROJUNCTION SOLAR-CELLS
    PAWLIKOWSKI, JM
    [J]. THIN SOLID FILMS, 1985, 127 (1-2) : 9 - 27
  • [6] CLOSE-SPACED VAPOR TRANSPORT COMBINED WITH FREE EVAPORATION FOR DOPING OF SEMICONDUCTOR THIN-FILMS
    CASTRORODRIGUEZ, R
    PENA, JL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (03): : 730 - 731
  • [7] Deposition study of Bi2Te3 thin films by Close-Spaced Vapor Transport and Close-Spaced Sublimation
    Kertoatmodjo, S
    Mostavan, A
    Adi, R
    Yanuar
    Marhoun, F
    Guastavino, F
    [J]. SOLID STATE PHENOMENA, 1999, 67-8 : 321 - 327
  • [8] Charge carrier transport via defect states in Cu(In, Ga)Se2 thin films and Cu(In, Ga)Se2/CdS/ZnO heterojunctions
    Schmitt, M
    Rau, U
    Parisi, J
    [J]. PHYSICAL REVIEW B, 2000, 61 (23): : 16052 - 16059
  • [9] Cathodoluminescence studies of Cu(In,Ga)Se2 thin-films
    Ott, N
    Hanna, G
    Albrecht, M
    Rau, U
    Werner, JH
    Strunk, HP
    [J]. POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 133 - 138
  • [10] CuIn0.7Ga0.3Se2 thin films’ properties grown by close-spaced vapor transport technique for second-generation solar cells
    N. Oulmi
    A. Bouloufa
    A. Benhaya
    R. Mayouche
    [J]. Materials for Renewable and Sustainable Energy, 2019, 8
12345