DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)

被引：158
|
作者：
FISCHER, R [1 ]
NEUMAN, D [1 ]
ZABEL, H [1 ]
MORKOC, H [1 ]
CHOI, C [1 ]
OTSUKA, N [1 ]
机构：
[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期
关键词：
D O I：
10.1063/1.96988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1223 / 1225
页数：3
相关论文
共 50 条
  • [1] DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI
    DEPPE, DG
    HOLONYAK, N
    HSIEH, KC
    NAM, DW
    PLANO, WE
    MATYI, RJ
    SHICHIJO, H
    APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1812 - 1814
  • [2] DISLOCATION REDUCTION IN HGCDTE ON GAAS AND SI
    SHIN, SH
    ARIAS, JM
    EDWALL, DD
    ZANDIAN, M
    PASKO, JG
    DEWAMES, RE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1492 - 1498
  • [3] DISLOCATION REDUCTION IN THE ANNEALED UNDERCUT GAAS ON SI
    SAKAI, S
    SHAO, CL
    WADA, N
    YUASA, T
    UMENO, M
    APPLIED PHYSICS LETTERS, 1992, 60 (12) : 1480 - 1482
  • [4] A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
    Wang, G.
    Loo, R.
    Simoen, E.
    Souriau, L.
    Caymax, M.
    Heyns, M. M.
    Blanpain, B.
    APPLIED PHYSICS LETTERS, 2009, 94 (10)
  • [5] DISLOCATION-DENSITY STUDIES ON EPITAXIAL GAAS ON SI SUBSTRATES
    MIZUKI, T
    SHIMIZU, M
    FURUKAWA, M
    SAKURAI, T
    SHARP TECHNICAL JOURNAL, 1988, (40): : 41 - 45
  • [6] EPITAXIAL REGROWTH OF SI IMPLANTED (100) AND (211) GAAS
    BHATTACHARYA, RS
    RAI, AK
    LING, SC
    PRONKO, PP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 131 - 136
  • [7] THREADING DISLOCATION DENSITY REDUCTION IN GAAS ON SI SUBSTRATES
    NISHIOKA, T
    ITOH, Y
    SUGO, M
    YAMAMOTO, A
    YAMAGUCHI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2271 - L2273
  • [8] Threading dislocation density reduction in GaAs on Si substrates
    Nishioka, Takashi
    Itoh, Yoshio
    Sugo, Mitsuru
    Yamamoto, Akio
    Yamaguchi, Masfumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2271 - 2273
  • [9] FERMI LEVEL PINNING AT EPITAXIAL SI ON GAAS(100) INTERFACES
    SILBERMAN, JA
    DELYON, TJ
    WOODALL, JM
    APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3300 - 3302
  • [10] DISLOCATION FREE EPITAXIAL GAAS
    ZIMMERLI, U
    STEINEMANN, A
    SOLID STATE COMMUNICATIONS, 1967, 5 (06) : 447 - +
12345