ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：24
|
作者：
KAWAMURA, Y
ASAHI, H
NAGAI, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期
关键词：
D O I：
10.1063/1.332045
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：841 / 846
页数：6
相关论文
共 50 条
  • [21] SPIN POLARIZED PHOTOEMISSION FROM MOLECULAR-BEAM EPITAXY-GROWN BE-DOPED GAAS
    ALVARADO, SF
    CICCACCI, F
    VALERI, S
    CAMPAGNA, M
    FEDER, R
    PLEYER, H
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1981, 44 (04): : 259 - 264
  • [22] INFRARED STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
    TALWAR, DN
    MANASREH, MO
    STUTZ, CE
    KASPI, R
    EVANS, KR
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) : 1445 - 1448
  • [23] BE-DOPED GAAS-LAYERS GROWN AT A HIGH AS/GA RATIO BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1120 - 1123
  • [24] SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    LEK, AW
    LAU, EH
    [J]. THIN SOLID FILMS, 1993, 235 (1-2) : 1 - 5
  • [25] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES
    ASAHI, H
    KAWAMURA, Y
    IKEDA, M
    OKAMOTO, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2852 - 2859
  • [26] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    PANISH, MB
    TEMKIN, H
    HAMM, RA
    CHU, SNG
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166
  • [27] HEAVILY SILICON DOPED INGAALAS/INP EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    RAMAM, A
    CHUA, SJ
    KARUNASIRI, G
    VAYA, PR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) : 186 - 190
  • [28] Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Kozhukhova, E. A.
    Dabiran, A. M.
    Chow, P. P.
    Wowchak, A. M.
    Pearton, S. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [29] MOLECULAR-BEAM EPITAXY AND OPTICAL-PROPERTIES OF GAALSB GASB HETEROJUNCTIONS
    RAISIN, C
    SAGUINTAAH, B
    TEGMOUSSE, H
    LASSABATERE, L
    GIRAULT, B
    ALIBERT, C
    [J]. ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1986, 41 (1-2): : 50 - 58
  • [30] Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
    I. I. Izhnin
    K. D. Mynbaev
    M. V. Yakushev
    A. I. Izhnin
    E. I. Fitsych
    N. L. Bazhenov
    A. V. Shilyaev
    H. V. Savitskyy
    R. Jakiela
    A. V. Sorochkin
    V. S. Varavin
    S. A. Dvoretsky
    [J]. Semiconductors, 2012, 46 : 1341 - 1345
12345