STRUCTURAL STUDIES OF II-VI SEMICONDUCTORS AT HIGH-PRESSURE

被引：63
|
作者：
NELMES, RJ
MCMAHON, MI
WRIGHT, NG
ALLAN, DR
机构：
[1] Department of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3JZ, Mayfield Road
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期
关键词：
SEMICONDUCTORS; X-RAY DIFFRACTION; HIGH PRESSURE; PHASE TRANSITIONS;
D O I：
10.1016/0022-3697(94)00235-5
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years at SRS Daresbury, using angle-dispersive techniques and an image-plate detector. In this paper, a brief overview is presented of recent work on ZnTe, CdTe, HgTe, HgS.
引用
收藏
页码：545 / 549
页数：5
相关论文
共 50 条
  • [21] Intrinsic defects in II-VI semiconductors
    Watkins, GD
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 338 - 344
  • [22] EFFECTIVE CHARGES IN II-VI SEMICONDUCTORS
    SOHN, SH
    HYUN, DG
    NOMA, M
    HOSOMI, S
    HAMAKAWA, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 907 - 912
  • [23] Applications of II-VI semimagnetic semiconductors
    Mycielski, A.
    Kowalczyk, L.
    Galazka, R.R.
    Sobolewski, Roman
    Wang, D.
    Burger, A.
    Sowińska, M.
    Groza, M.
    Siffert, P.
    Szadkowski, A.
    Witkowska, B.
    Kaliszek, W.
    [J]. Journal of Alloys and Compounds, 2006, 423 (1-2 SPEC. ISS.): : 163 - 168
  • [24] HOMOEPITAXY AND HETEROEPITAXY OF II-VI SEMICONDUCTORS
    FEUILLET, G
    DICIOCCIO, L
    HEWAT, E
    BOURRET, A
    CIBERT, J
    MAGNEA, N
    MARIETTE, H
    TATARENKO, S
    [J]. JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1988, 13 (03): : A46 - A46
  • [25] INTERACTION OF II-VI SEMICONDUCTORS WITH METALS
    TOMASHIK, VN
    GRYTSIV, VI
    [J]. INORGANIC MATERIALS, 1994, 30 (11) : 1282 - 1284
  • [26] BOUND BIEXCITONS IN II-VI SEMICONDUCTORS
    RAZBIRIN, BS
    NELSON, DK
    ERLAND, J
    PANTKE, KH
    LYSSENKO, VG
    HVAN, JM
    [J]. SOLID STATE COMMUNICATIONS, 1995, 93 (01) : 65 - 70
  • [27] PRESSURE-DEPENDENCE OF DEEP CENTERS IN II-VI SEMICONDUCTORS - THEORY
    PARK, CH
    CHADI, DJ
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) : 585 - 588
  • [28] THE SIZE DEPENDENCE OF THE HIGH-PRESSURE PHASE-STABILITY OF II-VI SEMICONDUCTOR NANOCRYSTALS
    SILVESTRI, MR
    SCHROEDER, J
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (45) : 8519 - 8527
  • [29] DFT-mBJ studies of the band structures of the II-VI semiconductors
    Khan, Imad
    Ahmad, Iftikhar
    Aliabad, H. A. Rahnamaye
    Maqbool, M.
    [J]. MATERIALS TODAY-PROCEEDINGS, 2015, 2 (10) : 5122 - 5127
  • [30] Spectroscopy of II-VI nanocrystals at high pressure and high temperature
    Schroeder, J
    Persans, PD
    [J]. JOURNAL OF LUMINESCENCE, 1996, 70 : 69 - 84
12345