STRUCTURAL STUDIES OF II-VI SEMICONDUCTORS AT HIGH-PRESSURE

被引：63
|
作者：
NELMES, RJ
MCMAHON, MI
WRIGHT, NG
ALLAN, DR
机构：
[1] Department of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3JZ, Mayfield Road
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期
关键词：
SEMICONDUCTORS; X-RAY DIFFRACTION; HIGH PRESSURE; PHASE TRANSITIONS;
D O I：
10.1016/0022-3697(94)00235-5
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years at SRS Daresbury, using angle-dispersive techniques and an image-plate detector. In this paper, a brief overview is presented of recent work on ZnTe, CdTe, HgTe, HgS.
引用
收藏
页码：545 / 549
页数：5
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