Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

被引：3

作者：

Chen, Li ^{[1
,2
,3
]}

Chen, Xinliang ^{[1
,2
,3
]}

Zhou, Zhongxin ^{[1
,2
,3
]}

Guo, Sheng ^{[1
,2
,3
]}

Zhao, Ying ^{[1
,2
,3
]}

Zhang, Xiaodan ^{[1
,2
,3
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China

[2] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China

[3] Nankai Univ, Key Lab Optoelect Informat Sci & Technol, Minist Educ, Tianjin 300071, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 03期

关键词：

AZO films; ALD; Zn : Al cycle ratio; optical and electrical properties;

D O I：

10.1088/1674-4926/39/3/033004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 degrees C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 x 10(-3) Omega center dot cm and high optical transmittance deposited at 150 degrees C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.

引用

页数：6

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