SILICON AMORPHIZATION DURING ION-IMPLANTATION AS A THERMAL PHENOMENON

被引：26
|
作者：
CEROFOLINI, GF
MEDA, L
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.36.5131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5131 / 5137
页数：7
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