共 50 条
- [32] IMPURITY MODES IN SEMI-INSULATING CHROMIUM DOPED GALLIUM-ARSENIDE PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 289 : 26 - 26
- [33] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTERS IN SEMI-INSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 788 - 790
- [34] DEEP CENTERS IN UNDOPED AND IRON-DOPED INDIUM-PHOSPHIDE SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 370 - 373
- [35] On the mechanism of semi-insulating property formation in In-doped GaAs Morozov, A.N., 1600, (97):
- [38] Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 15 - 18
- [40] HIGH QUALITY SEMI-INSULATING GaAs DOPED WITH CHROMIUM AND OXYGEN. Sumitomo Electric Technical Review, 1980, (19): : 97 - 102