共 50 条
- [21] PROPERTIES OF OXYGEN-DOPED AND CHROMIUM-DOPED INDIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 713 - 714
- [22] DETERMINATION OF CHARACTERISTICS OF IMPURITY CENTERS IN SEMI-INSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 892 - +
- [24] High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2017, 31 (04):
- [25] Novel metal-semiconductor-metal photodetectors on semi-insulating indium phosphide CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 407 - 412
- [26] Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide ADVANCES IN CRYSTAL GROWTH, 1996, 203 : 1 - 5
- [27] QUENCHING PHENOMENON OF PHOTOCONDUCTANCE IN INDIUM DOPED SEMI-INSULATING GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 189 - 194