STRUCTURE AND PROPERTIES OF THE SI-SIO2 INTERREGION

被引：0
|
作者：
HUBNER, K
机构：
来源：
LECTURE NOTES IN PHYSICS | 1983年 / 175卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：221 / 229
页数：9
相关论文
共 50 条
  • [31] The impact of the nitridation process on the properties of the Si-SiO2 interface
    Polignano, ML
    Alessandri, M
    Crivelli, B
    Zonca, R
    Caricato, AP
    Bersani, M
    Sbetti, M
    Vanzetti, L
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 280 (1-3) : 39 - 47
  • [32] MORPHOLOGY AND ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACES AND SI SURFACES
    HELMS, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 608 - 614
  • [33] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
    LSI/PEE/EPUSP, Sao Paulo, Brazil
    J Electrochem Soc, 3 (1021-1025):
  • [34] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
    Lopes, MCV
    dosSantos, SG
    Hasenack, CM
    Baranauskas, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1021 - 1025
  • [35] METASTABILITIES OF SI-SIO2 INTERFACE
    WHITE, CT
    NGAI, KL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 462 - 463
  • [36] ULTRASTABLE SI-SIO2 SURFACES
    SCHMIDT, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : C249 - &
  • [37] MORPHOLOGY OF SI-SIO2 INTERFACE
    SUGANO, T
    CHEN, JJ
    HAMANO, T
    SURFACE SCIENCE, 1980, 98 (1-3) : 154 - 166
  • [38] THE DOPED SI-SIO2 INTERFACE
    SNEL, J
    SOLID-STATE ELECTRONICS, 1981, 24 (02) : 135 - 139
  • [39] PHOTOINJECTION IN THE SI-SIO2 SYSTEM
    KOZLOV, SN
    KUZNETSOV, SN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (07): : 3 - 7
  • [40] Properties of Si-SiO2 structure with ultrathin dielectrics for nano- and microelectronics device application
    Evtukh, AA
    Lisovski, IP
    Litovchenko, VG
    Kizjak, AY
    Mazunov, D
    Szekeres, A
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 785 - 788
12345