STRUCTURE AND PROPERTIES OF THE SI-SIO2 INTERREGION

被引：0
|
作者：
HUBNER, K
机构：
来源：
LECTURE NOTES IN PHYSICS | 1983年 / 175卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：221 / 229
页数：9
相关论文
共 50 条
  • [21] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE
    HAIGHT, R
    FELDMAN, LC
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4884 - 4887
  • [22] ELECTRONIC-STRUCTURE OF DEFECTS AT SI-SIO2 INTERFACES
    HERMAN, F
    KASOWSKI, RV
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 395 - 401
  • [23] Microchannel avalanche photodetector based on a Si-SiO2 structure
    Musaev, MA
    TECHNICAL PHYSICS LETTERS, 2002, 28 (11) : 907 - 909
  • [24] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE
    LAUGHLIN, RB
    JOANNOPOULOS, JD
    CHADI, DJ
    PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744
  • [25] Atomic-scale structure of the Si-SiO2 and SiC-SiO2 interfaces and the origin of their contrasting properties
    Buczko, R
    Pennycook, SJ
    Pantelides, ST
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 227 - 232
  • [26] PROPERTIES OF CARRIERS AT SI-SIO2 INTERFACE IN MOSFET STRUCTURES
    STILES, PJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 958 - 961
  • [27] Microchannel avalanche photodetector based on a Si-SiO2 structure
    M. A. Musaev
    Technical Physics Letters, 2002, 28 : 907 - 909
  • [28] AN INVESTIGATION OF THE INTERFACE ELECTRONICS STRUCTURE OF SI-SIO2 JUNCTIONS
    CIRACI, S
    ELLIALTIOGLU, S
    ERKOC, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 402 - 404
  • [29] PROPERTIES OF THE FLUORINE-IMPLANTED SI-SIO2 SYSTEM
    VIRDI, GS
    RAUTHAN, CMS
    PATHAK, BC
    KHOKLE, WS
    SOLID-STATE ELECTRONICS, 1991, 34 (08) : 889 - 892
  • [30] THE STRUCTURAL AND CHEMICAL-PROPERTIES OF THE SI-SIO2 INTERFACE
    HELMS, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C95 - C96
12345