EXPERIMENTAL STUDY OF ZEEMAN SPLITTING OF BORON LEVELS IN SILICON

被引:28
|
作者
MERLET, F [1 ]
PAJOT, B [1 ]
ARCAS, P [1 ]
JEANLOUIS, AM [1 ]
机构
[1] UNIV PARIS 06, CNRS, LAB INFRAROUGE, BATIMENT 350, 91405 ORSAY, FRANCE
来源
PHYSICAL REVIEW B | 1975年 / 12卷 / 08期
关键词
D O I
10.1103/PhysRevB.12.3297
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3297 / 3317
页数:21
相关论文
共 50 条
  • [41] ZEEMAN EFFECT AND HYPERFINE SPLITTING OF POSITRONIUM
    DEUTSCH, M
    BROWN, SC
    PHYSICAL REVIEW, 1952, 85 (06): : 1047 - 1048
  • [42] FRAUNHOFER LINES WITHOUT ZEEMAN SPLITTING
    SISTLA, G
    HARVEY, JW
    SOLAR PHYSICS, 1970, 12 (01) : 66 - &
  • [43] ZEEMAN SPLITTING IN INTERSTELLAR-MOLECULES
    BEL, N
    LEROY, B
    ASTRONOMY & ASTROPHYSICS, 1989, 224 (1-2) : 206 - 208
  • [44] Zeeman splitting of shallow donors in GaN
    Mireles, F
    Ulloa, SE
    APPLIED PHYSICS LETTERS, 1999, 74 (02) : 248 - 250
  • [45] Zeeman splitting in the field of a cosmic string
    Wolf, C
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1997, 112 (10): : 1429 - 1431
  • [46] ZEEMAN LEVELS OF POSITRONIUM
    KASHUBA, RJ
    GROTCH, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 83 - 83
  • [47] Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based
    Saci, Lynda
    Mahamdi, Ramdane
    Mansour, Farida
    Temple-Boyer, Pierre
    ISTANBUL UNIVERSITY-JOURNAL OF ELECTRICAL AND ELECTRONICS ENGINEERING, 2012, 12 (01): : 1453 - 1456
  • [48] DEHYDROFLUORIDATION AND SPLITTING OF SILICON-NITROGEN BOND IN BORON TRIFLUORIDE/SILYLAMINE SYSTEMS
    ELTER, G
    GLEMSER, O
    HERZOG, W
    JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1972, 36 (02) : 257 - &
  • [49] Noncrucial role of the defects in the splitting for hydrogen implanted silicon with high boron concentration
    Popov, V.P.
    Stas, V.F.
    Antonova, I.V.
    Materials Research Society Symposium - Proceedings, 1999, 540 : 109 - 114
  • [50] Noncrucial role of the defects in the splitting for hydrogen implanted silicon with high boron concentration
    Popov, VP
    Stas, VF
    Antonova, IV
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 109 - 114