CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING

被引：0

作者：

JIN, SX ^{[1
]}

YUAN, MH ^{[1
]}

WANG, LP ^{[1
]}

SONG, HZ ^{[1
]}

WANG, HP ^{[1
]}

QIN, GG ^{[1
]}

机构：

[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

来源：

SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1994年 / 37卷 / 06期

关键词：

SCHOTTKY BARRIER (SB); METAL-SEMICONDUCTOR (MS) INTERFACES; HYDROGEN; ZERO BIAS ANNEALING (ZBA); REVERSE BIAS ANNEALING (RBA);

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-GaAs diodes containing hydrogen decrease and reverse bias annealing (RBA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or more, the SBHs haw a one-to-one correlation with the biases of RBA and the larger the bias applied, the higher the SBH is.

引用

页码：730 / 737

页数：8

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