CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING

被引：0
|
作者：
JIN, SX [1 ]
YUAN, MH [1 ]
WANG, LP [1 ]
SONG, HZ [1 ]
WANG, HP [1 ]
QIN, GG [1 ]
机构：
[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
来源：
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1994年 / 37卷 / 06期
关键词：
SCHOTTKY BARRIER (SB); METAL-SEMICONDUCTOR (MS) INTERFACES; HYDROGEN; ZERO BIAS ANNEALING (ZBA); REVERSE BIAS ANNEALING (RBA);
D O I：
暂无
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-GaAs diodes containing hydrogen decrease and reverse bias annealing (RBA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or more, the SBHs haw a one-to-one correlation with the biases of RBA and the larger the bias applied, the higher the SBH is.
引用
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页码：730 / 737
页数：8
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