共 50 条
- [31] Phase Trimming of Mach-Zehnder Interferometers by Laser Annealing of Germanium Implanted Waveguides 2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2017, : 39 - 40
- [33] Recrystallisation and dopant diffusion in amorphised germanium layers upon pulsed laser annealing Zymierska, D. (zymier@ifpan.edu.pl), 1600, Elsevier Ltd (362): : 1 - 2
- [34] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103
- [35] UTILIZATION COEFFICIENT OF IMPLANTED IMPURITIES IN SILICON LAYERS SUBJECTED TO SUBSEQUENT LASER ANNEALING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 190 - 192
- [36] Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 449 : 49 - 53
- [37] ANNEALING OF IMPLANTED LAYERS OF SILICON BY PULSED CO2-LASER RADIATION DOKLADY AKADEMII NAUK SSSR, 1981, 257 (05): : 1110 - 1113
- [39] Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (07): : 512 - 519