UTILIZATION COEFFICIENT OF IMPLANTED IMPURITIES IN SILICON LAYERS SUBJECTED TO SUBSEQUENT LASER ANNEALING

被引：0
|
作者：
KHAIBULLIN, IB [1 ]
SHTYRKOV, EI [1 ]
ZARIPOV, MM [1 ]
GALYAUTDINOV, MF [1 ]
ZAKIROV, GG [1 ]
机构：
[1] ACAD SCI USSR, PHYS TECH INST, KAZAN, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：190 / 192
页数：3
相关论文
共 50 条
  • [1] DIFFUSION OF IMPURITIES AS A RESULT OF LASER ANNEALING OF IMPLANTED LAYERS
    KACHURIN, GA
    NIDAEV, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 350 - 352
  • [2] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS
    KHAIBULLIN, IB
    SHTYRKOV, EI
    ZARIPOV, MM
    BAYAZITOV, RM
    GALJAUTDINOV, MF
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233
  • [3] DIFFUSION OF IMPURITIES FROM IMPLANTED SILICON LAYERS BY RAPID THERMAL ANNEALING
    ALEKSANDROV, OV
    KOZLOVSKII, VV
    POPOV, VV
    SAMORUKOV, BE
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02): : K61 - K65
  • [4] DIFFUSION OF ZINC DURING LASER ANNEALING OF IMPLANTED SILICON LAYERS
    MUSTAFIN, TN
    KACHURIN, GA
    POPOV, VP
    PRIDACHIN, NB
    SERYAPIN, VG
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 776 - 779
  • [5] LASER ANNEALING OF NITROGEN AND OXYGEN ION-IMPLANTED SILICON LAYERS
    DELLAMEA, G
    MAZZOLDI, P
    FOTI, G
    RIMINI, E
    MATERIALS CHEMISTRY, 1979, 4 (03): : 565 - 569
  • [6] LASER-BEAM ANNEALING OF HEAVILY DAMAGED IMPLANTED LAYERS ON SILICON
    MULLER, JC
    GROB, A
    GROB, JJ
    STUCK, R
    SIFFERT, P
    APPLIED PHYSICS LETTERS, 1978, 33 (04) : 287 - 289
  • [7] INFLUENCE OF LASER ANNEALING REGIMES ON ELECTRICAL CHARACTERISTICS OF IMPLANTED SILICON LAYERS
    KHAIBULLIN, IB
    SHTYRKOV, EI
    ZARIPOV, MM
    BAYAZITOV, RM
    AGANOV, RV
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 33 - 38
  • [8] LASER ANNEALING OF IMPLANTED SILICON
    KUTUKOVA, OG
    STRELTSOV, LN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 265 - 267
  • [9] ANNEALING OF IMPLANTED LAYERS OF SILICON BY PULSED CO2-LASER RADIATION
    GALIAUTDINOV, MF
    DANILEIKO, IK
    ZARIPOV, MM
    MANENKOV, AA
    SIDORIN, AV
    KHAIBULLIN, IB
    SHTYRKOV, EI
    DOKLADY AKADEMII NAUK SSSR, 1981, 257 (05): : 1110 - 1113
  • [10] ANNEALING OF ZINC-IMPLANTED SILICON LAYERS
    MUSTAFIN, TN
    POPOV, VP
    SERYAPIN, VG
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 75 - 77
12345