DETERMINATION OF EFFECTIVE ELECTRON MASS IN LIGHTLY DOPED SILICON FROM MICROWAVE REFLECTIVITY

被引:4
|
作者
PATRIN, NA
ARMSTRONG, DB
CHAMPLIN, KS
机构
关键词
D O I
10.1063/1.1709986
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2704 / +
页数:1
相关论文
共 50 条
  • [1] DETERMINATION OF THE ELECTRON EFFECTIVE MASS AND RELAXATION-TIME IN HEAVILY DOPED SILICON
    SLAOUI, A
    SIFFERT, P
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : 617 - 622
  • [2] ELECTRON AND HOLE MOBILITIES IN LIGHTLY DOPED SILICON
    MISIAKOS, K
    TSAMAKIS, D
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (15) : 2007 - 2009
  • [3] ELECTRON EFFECTIVE MASS DETERMINATION FROM INTRABAND FARADAY-ROTATION IN SILICON
    RUYMBEEK, G
    GREVENDONK, W
    NAGELS, P
    [J]. PHYSICA B & C, 1977, 89 (APR): : 14 - 17
  • [4] Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass
    G. Carelli
    N. Ioli
    A. Messina
    A. Moretti
    S. Schepis
    F. Strumia
    [J]. International Journal of Infrared and Millimeter Waves, 1998, 19 : 1191 - 1199
  • [5] Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass
    Carelli, G
    Ioli, N
    Messina, A
    Moretti, A
    Schepis, S
    Strumia, F
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1998, 19 (09): : 1191 - 1199
  • [6] Determination of the effective mass of GaN from infrared reflectivity and Hall effect
    Perlin, P
    LitwinStaszewska, E
    Suchanek, B
    Knap, W
    Camassel, J
    Suski, T
    Piotrzkowski, R
    Grzegory, I
    Porowski, S
    Kaminska, E
    Chervin, JC
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1114 - 1116
  • [7] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON
    EVWARAYE, AO
    SUN, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 3776 - 3780
  • [8] Method for the microwave measurement of carrier lifetime in lightly doped silicon ingots
    Borodovskii P.A.
    Buldygin A.F.
    Tokarev A.S.
    Chernyavskii E.V.
    [J]. Russian Microelectronics, 2005, 34 (5) : 316 - 324
  • [9] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON
    HOWARTH, LE
    GILBERT, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &
  • [10] DETERMINATION OF THE EFFECTIVE MASS FOR HIGHLY DEGENERATE COPPER SELENIDE FROM REFLECTIVITY MEASUREMENTS
    MANSOUR, BA
    DEMIAN, SE
    ZAYED, HA
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (04) : 249 - 252