共 50 条
- [1] DETERMINATION OF THE ELECTRON EFFECTIVE MASS AND RELAXATION-TIME IN HEAVILY DOPED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : 617 - 622
- [2] ELECTRON AND HOLE MOBILITIES IN LIGHTLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1994, 64 (15) : 2007 - 2009
- [3] ELECTRON EFFECTIVE MASS DETERMINATION FROM INTRABAND FARADAY-ROTATION IN SILICON [J]. PHYSICA B & C, 1977, 89 (APR): : 14 - 17
- [4] Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass [J]. International Journal of Infrared and Millimeter Waves, 1998, 19 : 1191 - 1199
- [5] Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1998, 19 (09): : 1191 - 1199