Determination of the effective mass of GaN from infrared reflectivity and Hall effect

被引：140
|
作者：
Perlin, P
LitwinStaszewska, E
Suchanek, B
Knap, W
Camassel, J
Suski, T
Piotrzkowski, R
Grzegory, I
Porowski, S
Kaminska, E
Chervin, JC
机构：
[1] POLISH ACAD SCI, HIGH PRESSURE RES CTR, UNIPRESS, PL-01442 WARSAW, POLAND
[2] UNIV WARSAW, INST PHYS EXPTL, WARSAW, POLAND
[3] UNIV MONTPELLIER 2, ETUD SEMICOND GRP, URA CNRS 357, F-34095 MONTPELLIER, FRANCE
[4] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND
[5] UNIV PARIS 06, F-75252 PARIS 05, FRANCE
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期
关键词：
D O I：
10.1063/1.115730
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Infrared reflectivity and Hall effect measurements were performed on highly conducting n-type GaN (n approximate to 6X10(19) cm(-3)) bulk crystals grown by the high-pressure high-temperature method, Values of electron-plasma frequency and free-electron concentration were determined for each sample of the set of seven crystals. It enabled us to calculate the perpendicular effective mass of electrons in the wurtzite structure of GaN as m*=0.22+/-0.02 m(0). Effects of nonparabolicity and a difference between parallel and perpendicular components of the effective mass are small and do not exceed the experimental error. (C) 1996 American Institute of Physics.
引用
收藏
页码：1114 / 1116
页数：3
相关论文
共 50 条
  • [1] Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
    Armakavicius, Nerijus
    Knight, Sean
    Kuehne, Philipp
    Stanishev, Vallery
    Tran, Dat Q.
    Richter, Steffen
    Papamichail, Alexis
    Stokey, Megan
    Sorensen, Preston
    Kilic, Ufuk
    Schubert, Mathias
    Paskov, Plamen P.
    Darakchieva, Vanya
    [J]. APL MATERIALS, 2024, 12 (02)
  • [2] Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass
    G. Carelli
    N. Ioli
    A. Messina
    A. Moretti
    S. Schepis
    F. Strumia
    [J]. International Journal of Infrared and Millimeter Waves, 1998, 19 : 1191 - 1199
  • [3] Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass
    Carelli, G
    Ioli, N
    Messina, A
    Moretti, A
    Schepis, S
    Strumia, F
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1998, 19 (09): : 1191 - 1199
  • [4] DETERMINATION OF EFFECTIVE ELECTRON MASS IN LIGHTLY DOPED SILICON FROM MICROWAVE REFLECTIVITY
    PATRIN, NA
    ARMSTRONG, DB
    CHAMPLIN, KS
    [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2704 - +
  • [5] DETERMINATION OF THE EFFECTIVE MASS FOR HIGHLY DEGENERATE COPPER SELENIDE FROM REFLECTIVITY MEASUREMENTS
    MANSOUR, BA
    DEMIAN, SE
    ZAYED, HA
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (04) : 249 - 252
  • [6] DETERMINATION OF EFFECTIVE MASS IN GAAS FROM MEASUREMENT OF FARADAY-EFFECT IN AN INFRARED REGION
    KONSTANTINESKU, K
    NAN, S
    [J]. REVUE ROUMAINE DE PHYSIQUE, 1973, 18 (03): : 335 - 341
  • [7] DETERMINATION OF EFFECTIVE MASS IN LASB FROM INFRARED REFLECTION SPECTRUM
    GONCHARO.EV
    KUKHARSK.AA
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1214 - +
  • [8] Complementary and alternative technique for the determination of electron effective mass: quantum Hall effect
    Ardali, S.
    Tiras, E.
    Arslan, E.
    Ozbay, E.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2016, 10 (9-10): : 647 - 650
  • [9] Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect
    [J]. Ardali, S. (sukruardali@anadolu.edu.tr), 2016, National Institute of Optoelectronics (10): : 9 - 10
  • [10] ELECTRON EFFECTIVE MASS IN PBS SINGLE CRYSTALS BY INFRARED REFLECTIVITY MEASUREMENTS
    BARTON, CF
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 445 - &
12345