Temperature dependence of InSb reflectivity in the far infrared: Determination of the electron effective mass

被引：3
|
作者：
Carelli, G
Ioli, N
Messina, A
Moretti, A
Schepis, S
Strumia, F
机构：
[1] CNR, Dipartimento Fis, I-56126 Pisa, Italy
[2] INFM, I-56126 Pisa, Italy
来源：
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1998年 / 19卷 / 09期
关键词：
InSb; electron effective mass; plasma frequency;
D O I：
10.1023/A:1022620709303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available.
引用
收藏
页码：1191 / 1199
页数：9
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