CHARACTERISTICS FOR 4MB ION-IMPLANTED BUBBLE MEMORY MODULES

被引：0

|

作者：

KATO, Y

机构：

[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 05期

关键词：

D O I：

10.1109/TMAG.1987.1065372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

5

引用

收藏

页码：2566 / 2568

页数：3

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