ZN-DIFFUSION-INDUCED DISORDERING OF INGAAS/ALGAINAS MULTIPLE-QUANTUM-WELL AND ITS APPLICATION TO LONG-WAVELENGTH LASER

被引：1
|
作者：
GOTO, K
UESUGI, F
TAKAHASHI, S
TAKIGUCHI, T
OMURA, E
MIHASHI, Y
机构：
[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corp., Itami, Hyogo, 664
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期
关键词：
LASER; DISORDERING; MQW; INGAAS/ALGALNAS; ZN DIFFUSION; LONG WAVELENGTH;
D O I：
10.1143/JJAP.33.5774
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Zn-diffusion-induced disordering of the InGaAs/AlGaInAs multiple quantum well (MQW) is investigated as a new processing technique for long-wavelength optoelectronic devices. Complete disordering of the MQW structure is confirmed through the observation of the shortening of the photoluminescence peak wavelength and secondary ion mass spectroscopy (SIMS) measurement. Lattice-matched disordering is also confirmed with X-ray diffraction. ii long-wavelength buried-MQW laser is fabricated for the first time, in which index-waveguide end carrier confinement are obtained by disordering. The pulsed oscillation at room temperature is achieved near 1.56 mu m.
引用
收藏
页码：5774 / 5778
页数：5
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