INDIRECT RECOMBINATION OF VACANCIES AND INTERSTITIAL ATOMS IN IRRADIATED SILICON

被引：0

作者：

KHOLODAR, GA ^{[1
]}

DANKOVSKII, YV ^{[1
]}

KONOPLYANYI, VV ^{[1
]}

VINETSKII, VL ^{[1
]}

机构：

[1] TG SHEVCHENKO STATE UNIV,KIEV,UKSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1016 / 1020

页数：5

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