ANNEALING STUDIES OF VACANCIES IN PROTON IRRADIATED SILICON

被引：11
|
作者：
DANNEFAER, S
MASCHER, P
KERR, D
机构：
[1] Department of Physics, University of Winnipeg, Winnipeg
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.352905
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Annealing of vacancies produced by heavy proton irradiation of float-zone (Fz) and P-doped Czochralski-grown (Cz) silicon has been investigated by positron lifetime spectroscopy. In Fz-Si divacancies are retained after irradiation, and these defects are completely annealed out at 700-degrees-C. In Cz P-doped silicon, impurities are found to enhance both the amount of retained vacancies as well as the tendency for vacancy clustering. Two annealing stages appear at 100-degrees-C and close to 450-degrees-C which seem to be a result of interstitial migration. Vacancy migration takes place in a wide temperature range between 100 and 1000-degrees-C.
引用
收藏
页码：3740 / 3743
页数：4
相关论文
共 50 条
  • [1] Some annealing effects in proton irradiated silicon detectors
    Pintilie, I
    Petris, M
    Tivarus, C
    Moll, M
    Fretwurst, E
    Lindstroem, G
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 259 - 262
  • [2] MECHANISM OF DIVACANCY ANNEALING IN PROTON-IRRADIATED SILICON
    BERMAN, LS
    VORONKOV, VB
    KOZLOV, VA
    REMENYUK, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 847 - 848
  • [3] Divacancies in proton irradiated silicon: characterization and annealing mechanisms
    Poirier, R
    Roorda, S
    Schiettekatte, F
    Lalancette, M
    Zikovsky, J
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 462 - 464
  • [4] THERMAL ANNEALING OF PROTON-IRRADIATED SILICON SOLAR CELLS
    FARADAY, BJ
    STATLER, RL
    TAUKE, RV
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01): : 31 - +
  • [5] PRODUCTION ANNEALING STUDIES OF PROTON AND DEUTERON IRRADIATED LEAD
    LWIN, YN
    EMERSON, D
    RYAN, EA
    JACKSON, JJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (01): : 65 - 65
  • [6] CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes
    Hoedlmoser, H.
    Moll, M.
    Koehler, M.
    Nordlund, H.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 583 (01): : 64 - 70
  • [7] Divacancies in proton irradiated silicon: variation of ESR signal with annealing time
    Poirier, R
    Avalos, V
    Dannefaer, S
    Schiettekatte, F
    Roorda, S
    Misra, SK
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 752 - 755
  • [8] Annealing of the photoluminescence W-center in proton-irradiated silicon
    Feick, Henning
    Weber, Eicke R.
    Physica B: Condensed Matter, 1999, 273 : 497 - 500
  • [9] Annealing of the photoluminescence W-center in proton-irradiated silicon
    Feick, H
    Weber, ER
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 497 - 500
  • [10] STUDY OF REARRANGEMENTS OF INTRINSIC DEFECTS AT ANNEALING OF PROTON-IRRADIATED SILICON
    KUZNETSOV, VI
    LUGAKOV, PF
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 112 (02): : 457 - 462
12345