ANNEALING STUDIES OF VACANCIES IN PROTON IRRADIATED SILICON

被引：11
|
作者：
DANNEFAER, S
MASCHER, P
KERR, D
机构：
[1] Department of Physics, University of Winnipeg, Winnipeg
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.352905
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Annealing of vacancies produced by heavy proton irradiation of float-zone (Fz) and P-doped Czochralski-grown (Cz) silicon has been investigated by positron lifetime spectroscopy. In Fz-Si divacancies are retained after irradiation, and these defects are completely annealed out at 700-degrees-C. In Cz P-doped silicon, impurities are found to enhance both the amount of retained vacancies as well as the tendency for vacancy clustering. Two annealing stages appear at 100-degrees-C and close to 450-degrees-C which seem to be a result of interstitial migration. Vacancy migration takes place in a wide temperature range between 100 and 1000-degrees-C.
引用
收藏
页码：3740 / 3743
页数：4
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