SELECTIVE CHEMICAL ETCHING OF LATENT COMPOSITIONAL MICROSTRUCTURES IN SPUTTERED CO-CR FILMS

被引:23
|
作者
TAKAHASHI, M
MAEDA, Y
机构
[1] NTT Basic Research Laboratories, Tokai, lbaraki
关键词
Chemical etching; Co-Cr film; Compositional microstructure; Cr depth profile; Passivation;
D O I
10.1143/JJAP.29.1705
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examine the validity of a chemical etching method to reveal latent compositional microstructures in a sputtered Co-19.7 at% Cr film. Using dilute aqua regia as the etching solution, changes in the microstructure, composition and chemical state of Co and Cr through chemical etching are investigated. It is observed that the chemical etching progresses from the film surface towards the bottom, revealing an in-grain microstructure comprising periodic stripes (about 8-nm periodicity). The etching causes an increase in Cr and O content and the preferential formation of Cr oxide. These results suggest that the latent compositional microstructure is revealed by selective chemical etching due to the passivation of Cr-rich regions resulting in the preferential dissolution of Co-rich regions. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:1705 / 1710
页数:6
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