TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF AN INGAASP LASER UNDER 130-PS ELECTRICAL PULSE PUMPING

被引：8

|

作者：

LIU, PL

HERITAGE, JP

MARTINEZ, OE

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：370 / 372

页数：3

相关论文

共 50 条

[21] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS
ASADA, M
ADAMS, AR
STUBKJAER, KE
SUEMATSU, Y
ITAYA, Y
ARAI, S
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 611 - 619
[22] ON THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF PBSE/PBSNSE DH-LASERS
BYCHKOVA, LP
DAVARASHVILI, OI
SHOTOV, AP
KVANTOVAYA ELEKTRONIKA, 1993, 20 (04): : 345 - 348
[23] TEMPERATURE DEPENDENCE OF GAIN SPECTRA, THRESHOLD CURRENT AND AUGER RECOMBINATION IN InGaAsP/InP DOUBLE HETEROJUNCTION LASER DIODE.
Li, Yuzhang
Yue, Jingxing
Xu, Junying
Zheng, Boazhen
Wang, Xiaojie
Zhuang, Weihua
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (04): : 364 - 372
[24] TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT FOR ALGAAS LASERS GROWN BY LOW-TEMPERATURE LPE
SANCHEZ, M
GONZALEZ, JC
MARIN, E
DIAZ, P
PRUTSKIJ, TA
REVISTA MEXICANA DE FISICA, 1995, 41 (05) : 739 - 746
[25] Threshold current and its temperature dependence in InGaAsP/InP strained quantum-well lasers under a magnetic field
Sugawara, Mitsuru
1995, JJAP, Minato-ku, Japan (34):
[26] THRESHOLD TEMPERATURE-DEPENDENCE OF SUBNANOSECOND OPTICALLY-EXCITED 1.3-MU-M INGAASP LASERS
MARTINEZ, OE
HERITAGE, JP
MILLER, BI
DUTTA, NK
NELSON, RJ
APPLIED PHYSICS LETTERS, 1984, 44 (06) : 578 - 580
[27] MODELING THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT, EXTERNAL DIFFERENTIAL EFFICIENCY AND LASING WAVELENGTH IN QW LASER-DIODES
MENZEL, U
BARWOLFF, A
ENDERS, P
ACKERMANN, D
PUCHERT, R
VOSS, M
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) : 1382 - 1392
[28] ISOTHERMAL CURRENT PEAK ON TEMPERATURE-DEPENDENCE OF ELECTRICAL-CONDUCTIVITY IN POLYETHYLENE
SAKAMOTO, H
YAHAGI, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 699 - 700
[29] Temperature dependence of the threshold current density of a quantum dot laser
Asryan, LV
Suris, RA
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) : 841 - 850
[30] AN EFFECT OF THE ACTIVE REGION THICKNESS ON THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT IN HOMOSTRUCTURE LASERS
TSIDULKO, IM
KVANTOVAYA ELEKTRONIKA, 1980, 7 (07): : 1461 - 1465

← 1 2 3 4 5 →