OPTIMIZED ESD PROTECTION CIRCUITS FOR HIGH-SPEED MOS VLSI

被引：0
|
作者：
FUJISHIN, E [1 ]
GARRETT, K [1 ]
LEVIS, MP [1 ]
MOTTA, RF [1 ]
HARTRANFT, M [1 ]
机构：
[1] CYPRESS SEMICOND CORP,SANTA CLARA,CA 95050
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 02期
关键词：
D O I：
10.1109/JSSC.1985.1052350
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：594 / 596
页数：3
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