ESD Protection Design for High-Speed Circuits in Nanoscale CMOS Process

被引：0
|
作者：
Lin, Chun-Yu [1 ]
Chang, Rong-Kun [1 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC) | 2016年
关键词：
CMOS; electrostatic discharge ( ESD) protection; high-speed circuits; RECEIVER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] ESD Protection Design for High-Speed Applications in CMOS Technology
    Chen, Jie-Ting
    Lin, Chun-Yu
    Chang, Rong-Kun
    Ker, Ming-Dou
    Tzeng, Tzu-Chien
    Lin, Tzu-Chiang
    2016 IEEE 59TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2016, : 305 - 308
  • [2] ESD Protection for High-Speed Receiver Circuits
    Jack, Nathan
    Rosenbaum, Elyse
    2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 835 - 840
  • [3] p-Shape ESD Protection Design for Multi-Gbps High-Speed Circuits in CMOS Technology
    Chang, Chun-Rong
    Dai, Zih-Jyun
    Lin, Chun-Yu
    MATERIALS, 2023, 16 (07)
  • [4] Distributed ESD protection for high-speed integrated circuits
    Kleveland, B
    Maloney, TJ
    Morgan, I
    Madden, L
    Lee, TH
    Wong, SS
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (08) : 390 - 392
  • [5] OPTIMIZED ESD PROTECTION CIRCUITS FOR HIGH-SPEED MOS VLSI
    FUJISHIN, E
    GARRETT, K
    LEVIS, MP
    MOTTA, RF
    HARTRANFT, M
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (02) : 594 - 596
  • [6] Transient Analysis of ESD Protection Circuits for High-Speed ICs
    Meiguni, Javad Soleiman
    Zhou, Jianchi
    Maghlakelidze, Giorgi
    Xu, Yang
    Izadi, Omid Hoseini
    Marathe, Shubhankar
    Shen, Li
    Bub, Sergej
    Holland, Steffen
    Beetner, Daryl G.
    Pommerenke, David
    IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2021, 63 (05) : 1312 - 1321
  • [7] ESD Protection Design for Radio-Frequency Integrated Circuits in Nanoscale CMOS Technology
    Lin, Chun-Yu
    Chu, Li-Wei
    Tsai, Shiang-Yu
    Ker, Ming-Dou
    Song, Ming-Hsiang
    Jou, Chewn-Pu
    Lu, Tse-Hua
    Tseng, Jen-Chou
    Tsai, Ming-Hsien
    Hsu, Tsun-Lai
    Hung, Ping-Fang
    Wei, Yu-Lin
    Chang, Tzu-Heng
    2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2013, : 241 - 244
  • [8] A Novel ESD Protection Circuit Applied in High-speed CMOS IC
    Zhang, Bing
    Chai, Changchun
    Yang, Yintang
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 345 - 348
  • [9] ESD protection of RF circuits in standard CMOS process
    Higashi, K
    Adan, AO
    Fukumi, M
    Tanba, N
    Yoshimasu, T
    Hayashi, M
    2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 285 - 288
  • [10] ESD protection of RF circuits in standard CMOS process
    Higashi, K
    Adan, AO
    Fukumi, M
    Tanba, N
    Yoshimasu, T
    Hayashi, M
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 31 - 34
12345