CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT 1050-1250-DEGREES-C

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作者：
BARANOV, IM
BELOV, NA
DMITRIEV, VA
IVANOVA, NG
KONDRATEVA, TS
NIKITINA, IP
CHELNOKOV, VE
SHATALOV, VF
ERLIKH, RN
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PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1989年 / 15卷 / 12期
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O59 [应用物理学];
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页码：50 / 52
页数：3
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