OXIDATION BEHAVIOR OF SILICON-CARBIDE FROM 1300 DEGREES TO 1600 DEGREES C

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作者：

MILLER, WJ

DAVIS, HH

GRAHAM, HC

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来源：

AMERICAN CERAMIC SOCIETY BULLETIN | 1972年 / 51卷 / 04期

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TQ174 [陶瓷工业]; TB3 [工程材料学];

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0805 ; 080502 ;

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页码：431 / &

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