ISOTOPE LABELING STUDIES OF THE OXIDATION OF SILICON AT 1000-DEGREES-C AND 1300-DEGREES-C

被引：74

作者：

COSTELLO, JA ^{[1
]}

TRESSLER, RE ^{[1
]}

机构：

[1] PENN STATE UNIV, DEPT MAT SCI & ENGN, UNIVERSITY PK, PA 16802 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115997

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1944 / 1947

页数：4

共 50 条

[1] STUDIES OF THE OXIDATION OF TANTALUM AT 1000-DEGREES-C-1300-DEGREES-C
KOFSTAD, P
[J]. JOURNAL OF THE LESS-COMMON METALS, 1963, 5 (02): : 158 - 170
[2] SOLUBILITY OF HYDROGEN IN SILICON AT 1300-DEGREES-C
MCQUAID, SA
BINNS, MJ
NEWMAN, RC
LIGHTOWLERS, EC
CLEGG, JB
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1612 - 1614
[3] 500-DEGREES-C TO 1300-DEGREES-C KINETICS OF THE OXIDATION OF PURE TUNGSTEN
GULBRANSEN, EA
ANDREW, KF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C73 - C73
[4] OXIDATION OF CARBON BETWEEN 1000-DEGREES-C AND 2400-DEGREES-C
WALLS, JR
STRICKLANDCONSTABLE, RF
[J]. CARBON, 1964, 1 (03) : 333 - &
[5] KINETICS OF THE OXIDATION OF PURE TUNGSTEN FROM 500-DEGREES-C TO 1300-DEGREES-C
GULBRANSEN, EA
ANDREW, KF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (07) : 619 - 628
[6] STRENGTH OF TITANIUM AT 1300-DEGREES-C - 1600-DEGREES-C
SCALA, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (03) : C51 - C51
[7] ELECTROCHEMISTRY AT 1000-DEGREES-C
KOENITZER, JW
POEPPELMEIER, KR
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 55 - PHYS
[8] KINETICS OF IRON OXIDATION WITH CO2 BETWEEN 1300-DEGREES-C AND 1450-DEGREES-C
YAN, CY
OETERS, F
[J]. STEEL RESEARCH, 1994, 65 (09): : 355 - 361
[9] CYCLIC FATIGUE OF SILICON-NITRIDE AT 1000-DEGREES-C
BUSHBY, A
GUIU, F
KNOWLES, J
REECE, MJ
[J]. SILICON NITRIDE 93, 1994, 89-9 : 673 - 677
[10] OXIDATION OF COBALT-CHROMIUM ALLOYS AT 1000-DEGREES-C
PRZYBYLSKI, K
SZWAGIERCZAK, D
[J]. ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1979, 4 (1-2): : 61 - 76

← 1 2 3 4 5 →