ELECTROSTATIC PROPERTIES OF SIC-6H STRUCTURES WITH AN ABRUPT P-N-JUNCTION

被引:0
|
作者
ANIKIN, MM
LEBEDEV, AA
POPOV, IV
PYATKO, SN
RASTEGAEV, VP
SYRKIN, AL
TSARENKOV, BV
CHELNOKOV, VE
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 01期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:80 / 83
页数:4
相关论文
共 50 条
  • [1] THE FORWARD BIASED, ABRUPT P-N-JUNCTION
    GUCKEL, H
    DEMIRKOL, A
    THOMAS, D
    IYENGAR, S
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 105 - 113
  • [2] HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES
    MATUS, LG
    POWELL, JA
    SALUPO, CS
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1770 - 1772
  • [3] MBE GROWTH OF 3C.SIC/6H.SIC AND THE ELECTRIC PROPERTIES OF ITS P-N-JUNCTION
    KANEDA, S
    SAKAMOTO, Y
    MIHARA, T
    TANAKA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 536 - 542
  • [4] STUDY OF SIC-6H DINISTOR STRUCTURES
    ANDREEV, AN
    STRELCHUK, AM
    SAVKINA, NS
    SNEGOV, FM
    CHELNOKOV, VE
    [J]. SEMICONDUCTORS, 1995, 29 (06) : 561 - 565
  • [5] SPACE-CHARGE CAPACITANCE OF AN ABRUPT P-N-JUNCTION
    PARROTT, JE
    TIENG, M
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01): : K43 - K46
  • [6] OFFSET VOLTAGE AND SPACE-CHARGE LAYER CAPACITANCE OF A LINEARLY GRADED P-N-JUNCTION AND AN ABRUPT P-N-JUNCTION
    HO, FD
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1990, 69 (02) : 247 - 266
  • [7] INTERFACE EXCITATIONS IN P-N-JUNCTION STRUCTURES
    ROBLES, VMG
    DELACRUZ, GG
    [J]. SOLID STATE COMMUNICATIONS, 1990, 75 (05) : 405 - 407
  • [8] CAPACITANCE OF ABRUPT P-N-JUNCTION DIODES UNDER FORWARD BIAS
    GREEN, MA
    GUNN, MW
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (01): : K93 - K96
  • [9] ELECTRICAL-PROPERTIES OF EPITAXIAL 3C-SIC AND 6H-SIC P-N-JUNCTION DIODES PRODUCED SIDE-BY-SIDE ON 6H-SIC SUBSTRATES
    NEUDECK, PG
    LARKIN, DJ
    STARR, JE
    POWELL, JA
    SALUPO, CS
    MATUS, LG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 826 - 835
  • [10] PROPERTIES OF A P-N-JUNCTION IN A FERROELECTRIC SEMICONDUCTOR
    SANDOMIRSKII, VB
    KHALILOV, SS
    CHENSKII, EV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 279 - 283