CAPACITANCE OF ABRUPT P-N-JUNCTION DIODES UNDER FORWARD BIAS

被引：7
|
作者：
GREEN, MA [1 ]
GUNN, MW [1 ]
机构：
[1] UNIV QUEENSLAND,DEPT ELECT ENGN,BRISBANE,AUSTRALIA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 01期
关键词：
D O I：
10.1002/pssa.2210190163
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K93 / K96
页数：4
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